elektronische bauelemente SSD50N10 50a , 100v , r ds(on) 22m ? n-ch enhancement mode power mosfet 19-oct-2012 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. a c d n o p g e f h k j m b to-252(d-pack) 50n10 ???? ? rohs compliant product a suffix of ?-c? specifies halogen free description the SSD50N10 is the highest performance trench n-ch mosfets with extreme high cell density , which provide excellent r ds(on) and gate charge for most of the synchronous buck converter applications . features ? advanced high cell density trench technology ? super low gate charge ? excellent cdv/dt effect decline ? 100% eas guaranteed ? green device available marking package information package mpq leader size to-252 2.5k 13 inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 100 v gate-source voltage v gs 20 v t c =25c 50 a continuous drain current @v gs =10v 1 t c =100c i d 28 a pulsed drain current 2 i dm 100 a t c =25c 90 total power dissipation 4 t a =70c p d 2 w single pulse avalanche energy 3 e as 98 mj single pulse avalanche current i as 41 a operating junction and st orage temperature range t j , t stg -55~150 c thermal resistance rating maximum thermal resistance junction-ambient 1 r ja 62.5 c / w maximum thermal resistance junction-case 1 r jc 1.4 c / w ? ? gate ? ? source ? ? drain date code millimete r millimete r ref. min. max. ref. min. max. a 6.35 6.80 j 2.30 ref. b 5.20 5.50 k 0.64 0.90 c 2.15 2.40 m 0.50 1.1 d 0.45 0.58 n 0.9 1.65 e 6.8 7.5 o 0 0.15 f 2.40 3.0 p 0.43 0.58 g 5.40 6.25 h 0.64 1.20
elektronische bauelemente SSD50N10 50a , 100v , r ds(on) 22m ? n-ch enhancement mode power mosfet 19-oct-2012 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t j =25c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static drain-source breakdown voltage bv dss 100 - - v v gs =0, i d = 250 a gate-threshold voltage v gs(th) 2.5 - 4.5 v v ds =v gs , i d =250 a gate-source leakage current i gss - - 100 na v gs = 20v t j =25c - - 1 v ds =80v, v gs =0 drain-source leakage current t j =55c i dss - - 5 a v ds =80v, v gs =0 static drain-source on-resistance 2 r ds(on) - 18 22 m ? v gs =10v, i d =30a total gate charge 2 q g - 27.6 - gate-source charge q gs - 11.4 - gate-drain (?miller?) change q gd - 7.9 - nc i d =30a v ds =80v v gs =10v turn-on delay time 2 t d(on) - 15.6 - rise time t r - 17.2 - turn-off delay time t d(off) - 16.8 - fall time t f - 9.2 - ns v ds =50v i d =30a v gs =10v r l =3.3 ? input capacitance c iss - 1890 - output capacitance c oss - 268 - reverse transfer capacitance c rss - 67 - pf v gs =0 v ds =15v f =1.0mhz gate resistance r g 1.9 3.8 ? f=1mhz guaranteed avalanche characteristics single pulse avalanche energy 5 eas 53 - - mj v dd =25v, l=0.1mh, i as =30a source-drain diode diode forward voltage 2 v sd - - 1.2 v i s =1a, v gs =0 , t j =25c continuous source current 1,6 i s - - 45 a pulsed source current 2,6 i sm - - 100 a v d =v g =0, force current reverse recovery time t rr - 34 - ns reverse recovery charge q rr - 47 - nc i f =30a, di/dt=100a/s , t j =25c notes: 1. the data tested by surface mounted on a 1 inch2 fr-4 board with 2 oz copper. 2. the data tested by pulsed , pulse width Q 300 s , duty cycle Q 2% 3. the eas data shows max. rating . the test condition is v dd =25v,v gs =10v,l=0.1mh,i as =41a 4. the power dissipation is limited by 150c, junction temperature 5. the min. value is 100% eas tested guarantee. 6. the data is theoretically the same as i d and i dm , in real applications , should be limited by total power dissipation.
elektronische bauelemente SSD50N10 50a , 100v , r ds(on) 22m ? n-ch enhancement mode power mosfet 19-oct-2012 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
elektronische bauelemente SSD50N10 50a , 100v , r ds(on) 22m ? n-ch enhancement mode power mosfet 19-oct-2012 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
|
